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What are Silicon Carbide (SiC) Wafers & Substrates?

Silicon Carbide (SiC) wafers and substrates are specialized materials used in semiconductor technology made from silicon carbide, a compound known for its high thermal conductivity, excellent mechanical strength, and wide bandgap. Exceptionally hard and lightweight, SiC wafers and substrates provide a robust foundation for fabricating high-power, high-frequency electronic devices, such as power electronics and radio frequency components. 

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Silicon carbide wafers’ unique properties make them ideal for applications requiring high-temperature operation, harsh environments, and improved energy efficiency. 

Compared to conventional Si devices, SiC-based power devices have faster switching speeds, higher voltages, lower parasitic resistances, smaller sizes, and less cooling required due to high-temperature capability.

Silicon Carbide (SiC) Wafers & Substrates Applications

Silicon carbide wafers are utilized in electronic devices like power diodes, MOSFETs, high-power microwave devices, and RF transistors, enabling efficient energy conversion and power management. SiC wafers and substrates also find use in automotive electronics, aerospace systems, and renewable energy technologies. 

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Silicon carbide wafers and SiC substrates are also employed in gas and chemical sensors and advanced research fields like quantum computing and high-frequency communications, driving innovation and performance in various technological domains. High-power MMIC applications often use silicon carbide wafers and substrates. SiC also functions as a substrate for the epitaxial growth of GaN and higher-power MMIC devices.

How Do You Choose Silicon Carbide Wafers & SiC Substrates?

When making silicon carbide wafer and SiC substrate choices, consider the following parameters:

• Doping: Select appropriate dopants (e.g., nitrogen, aluminum) for desired electrical properties in SiC material.
• Wafer Size: Evaluate available sizes to ensure compatibility with your fabrication process.
• Surface Roughness: Assess low roughness values (e.g., RMS <1 nm) to prevent issues during deposition or device fabrication.
• Crystal Orientation: Determine the desired orientation (e.g., 4H-SiC, 6H-SiC) for specific device performance.
• Thickness: Determine required wafer thickness based on mechanical and electrical requirements.
• Defect Density: Evaluate defect presence to improve device performance.
• Resistivity: Consider the resistivity range to match the intended electrical behavior of SiC material.

MSE Supplies will customize silicone carbide wafers and substrates to meet your requirements. Custom-made epitaxial wafers such as SiC-on-SiC and GaN-on-SiC wafers are also available. Please request a quote and learn about the solutions we provide.

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